PMV33UPE

NXP  PMV33UPE  晶体管, MOSFET, P沟道, -5.3 A, -20 V, 0.03 ohm, -4.5 V, -700 mV

The is a P-channel enhancement-mode FET in a small surface-mount plastic package using Trench MOSFET technology. It is suitable for use in relay driver, high-speed line driver, High-side load-switch and switching circuit applications.

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Low threshold voltage

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Very fast switching

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2kV ESD protected

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-55 to 150°C Junction temperature range