NXP PSMN6R5-80PS 晶体管, MOSFET, N沟道, 100 A, 80 V, 5.9 mohm, 10 V, 3 V
The is a N-channel MOSFET suitable for standard level gate drive sources. It is designed and qualified for use in a wide range of DC-to-DC converters, load switching, server power supplies and domestic equipment applications.
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- High efficiency due to low switching and conduction losses
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- -55 to 175°C Junction temperature range
针脚数 3
漏源极电阻 5.9 mΩ
极性 N-Channel
耗散功率 210 W
阈值电压 3 V
漏源极电压Vds 80 V
连续漏极电流Ids 100A
输入电容Ciss 4461pF @40VVds
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 210 W
安装方式 Through Hole
引脚数 3
封装 TO-220
长度 10.3 mm
宽度 4.7 mm
高度 16 mm
封装 TO-220
工作温度 -55℃ ~ 175℃
产品生命周期 Unknown
制造应用 Industrial, Consumer Electronics, Motor Drive & Control, Communications & Networking, Power Management
RoHS标准 RoHS Compliant
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
PSMN6R5-80PS NXP 恩智浦 | 当前型号 | 当前型号 |
PSMN015-60PS 恩智浦 | 类似代替 | PSMN6R5-80PS和PSMN015-60PS的区别 |
CSD19501KCS 德州仪器 | 功能相似 | PSMN6R5-80PS和CSD19501KCS的区别 |