NXP PBSS306PX,115 单晶体管 双极, PNP, -100 V, 100 MHz, 600 mW, -3.7 A, 300 hFE
The is a 3.7A PNP breakthrough-in small signal BISS Transistor in a small and flat lead surface-mount plastic package. It offers collector pad for good heat transfer.
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- Low collector-emitter saturation voltage VCEsat
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- High collector current capability IC and ICM
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- High collector current gain hFE at high IC
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- High efficiency due to less heat generation
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- Smaller required printed-circuit board PCB area than for conventional transistors
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- NPN complement is PBSS306NX
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- 5N Marking code
频率 100 MHz
针脚数 3
极性 PNP
耗散功率 600 mW
击穿电压集电极-发射极 100 V
集电极最大允许电流 3.7A
最小电流放大倍数hFE 100 @2A, 2V
最大电流放大倍数hFE 200 @0.5A, 2V
额定功率Max 2.1 W
直流电流增益hFE 300
工作温度Max 150 ℃
耗散功率Max 2100 mW
安装方式 Surface Mount
引脚数 3
封装 SOT-89-3
宽度 2.6 mm
封装 SOT-89-3
工作温度 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 Power Management, Automotive, Industrial, Motor Drive & Control
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
PBSS306PX,115 NXP 恩智浦 | 当前型号 | 当前型号 |
PBSS306PX 安世 | 功能相似 | PBSS306PX,115和PBSS306PX的区别 |