PSMN040-100MSE

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PSMN040-100MSE概述

NXP  PSMN040-100MSE  晶体管, MOSFET, N沟道, 30 A, 100 V, 0.0294 ohm, 10 V, 3.3 V

The is a 100V N-channel standard level MOSFET designed for high power PoE systems capable of delivering up to 90W to each powered device PD. Such solutions place increased demands on the power sourcing equipment PSE in terms of soft-start, thermal management and power density requirements.

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Enhanced forward biased safe operating area for superior linear mode operation
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Low RDS ON for low conduction losses
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Ultra reliable LFPAK33 package for superior thermal and ruggedness performance
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Very low IDSS
PSMN040-100MSE中文资料参数规格
技术参数

针脚数 4

漏源极电阻 0.0294 Ω

极性 N-Channel

耗散功率 91 W

阈值电压 3.3 V

漏源极电压Vds 100 V

连续漏极电流Ids 28A

工作温度Max 175 ℃

封装参数

引脚数 4

封装 SOT-1210

外形尺寸

封装 SOT-1210

其他

产品生命周期 Unknown

制造应用 通信与网络, Communications & Networking

符合标准

RoHS标准 Non-Compliant

REACH SVHC标准 No SVHC

REACH SVHC版本 2015/12/17

数据手册

在线购买PSMN040-100MSE
型号: PSMN040-100MSE
制造商: NXP 恩智浦
描述:NXP  PSMN040-100MSE  晶体管, MOSFET, N沟道, 30 A, 100 V, 0.0294 ohm, 10 V, 3.3 V

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