PUMH10

NXP  PUMH10  晶体管 双极预偏置/数字, BRT, 50 V, 100 mA, 2.2 kohm, 47 kohm, 0.047 电阻比率, SOT-363

集电极-基极反向击穿电压VBRCBO Collector-Base VoltageVCBO| 50V \---|--- 集电极-发射极反向击穿电压VBRCEO Collector-Emitter VoltageVCEO| 50V 集电极连续输出电流IC Collector CurrentIC| 100mA Q1基极输入电阻R1 Input ResistanceR1| 2.2KΩ/Ohm Q1基极-发射极输入电阻R2 Base-Emitter ResistanceR2| 47KΩ/Ohm Q1电阻比R1/R2 Q1 Resistance Ratio| 0.047 Q2基极输入电阻R1 Input ResistanceR1| 2.2KΩ/Ohm Q2基极-发射极输入电阻R2 Base-Emitter ResistanceR2| 47KΩ/Ohm Q2电阻比R1/R2 Q2 Resistance Ratio| 0.047 直流电流增益hFE DC Current GainhFE| 100 截止频率fT Transtion FrequencyfT| 耗散功率Pc Power Dissipation| 300mW/0.3W Description & Applications| Features • NPN/NPN resistor-equipped transistors; • Built-in bias resistors • Reduces component count • Reduces pick and place costs • Simplifies circuit design APPLICATIONS • Low current peripheral drivers • Replacement of general purpose transistors in digital applications • Control of IC inputs 描述与应用| 特点 •NPN/ NPN电阻配备; •内置偏置电阻 •减少了元件数量 •减少取放成本 •简化电路设计 应用 •低电流外设驱动程序 •通用晶体管数字应用的更换 •控制IC投入