NXP PBSS306NZ,135 单晶体管 双极, NPN, 100 V, 110 MHz, 700 mW, 5.1 A, 30 hFE
The is a 5.1A NPN breakthrough-in small signal BISS Transistor in a small surface-mount plastic package with increased heat-sink.
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- Low collector-emitter saturation voltage VCEsat
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- High collector current capability IC and ICM
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- High collector current gain hFE at high IC
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- High efficiency due to less heat generation
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- Smaller required printed-circuit board PCB area than for conventional transistors
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- PNP complement is PBSS306PZ
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- S306NZ Marking code
频率 110 MHz
针脚数 4
极性 NPN
耗散功率 700 mW
击穿电压集电极-发射极 100 V
集电极最大允许电流 5.1A
最小电流放大倍数hFE 100 @2A, 2V
额定功率Max 2 W
直流电流增益hFE 30
工作温度Max 150 ℃
工作温度Min -65 ℃
安装方式 Surface Mount
引脚数 4
封装 TO-261-4
封装 TO-261-4
工作温度 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 Power Management, Automotive, Industrial, Motor Drive & Control
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
PBSS306NZ,135 NXP 恩智浦 | 当前型号 | 当前型号 |
FZT853 威世 | 功能相似 | PBSS306NZ,135和FZT853的区别 |