NXP PBSS4140T,215 单晶体管 双极, NPN, 40 V, 150 MHz, 300 mW, 1 A, 200 hFE
The is a 1A NPN breakthrough-in small signal BISS Transistor in a plastic package. It is suitable for use with the general purpose switching and muting, battery driven equipment"s.
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- Low collector-emitter saturation voltage VCEsat
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- High current capabilities
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- Improved device reliability due to reduced heat generation
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- PNP complement is PBSS5140T
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- ZT Marking code
频率 150 MHz
针脚数 3
极性 NPN
耗散功率 300 mW
击穿电压集电极-发射极 40 V
集电极最大允许电流 1A
最小电流放大倍数hFE 300 @500mA, 5V
额定功率Max 450 mW
直流电流增益hFE 200
工作温度Max 150 ℃
工作温度Min -65 ℃
耗散功率Max 450 mW
安装方式 Surface Mount
引脚数 3
封装 SOT-23-3
封装 SOT-23-3
工作温度 150℃ TJ
产品生命周期 Active
包装方式 Cut Tape CT
制造应用 Power Management, Consumer Electronics, Industrial, Lighting, Portable Devices, Imaging, Video & Vision
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
PBSS4140T,215 NXP 恩智浦 | 当前型号 | 当前型号 |
PBSS4140T,235 恩智浦 | 完全替代 | PBSS4140T,215和PBSS4140T,235的区别 |
PMMT491A,215 恩智浦 | 类似代替 | PBSS4140T,215和PMMT491A,215的区别 |
PMMT491A,235 恩智浦 | 类似代替 | PBSS4140T,215和PMMT491A,235的区别 |