硅雪崩二极管 - 硅雪崩二极管 Silicon Avalanche Diodes - Silicon Avalanche Diodes
Protect sensitive electronics against voltage transients induced by inductive load switching and lightning. Ideal for the protection of I/O interfaces, Vcc bus, and other integrated circuits.
FEATURES
• Breakdown voltage range 6.8 to 440 Volts
• Uni-directional and Bi-directional
• Glass passivated junction
• Excellent clamping capability
• 100% surge tested
• UL recognised
得捷:
TVS DIODE 43.6VWM 73.61VC DO15
贸泽:
ESD Suppressors / TVS Diodes 41.3Vr 600W 8.2A 10% Bi-Directional
艾睿:
Diode TVS Single Bi-Dir 43.6V 600W 2-Pin DO-15
Chip1Stop:
Diode TVS Single Bi-Dir 41.3V 600W 2-Pin DO-15
额定电压DC 51.0 V
工作电压 43.6 V
额定功率 600 W
击穿电压 45.9 V
耗散功率 6 kW
钳位电压 73.5 V
脉冲峰值功率 600 W
最小反向击穿电压 45.95 V
工作温度Max 175 ℃
工作温度Min 55 ℃
安装方式 Through Hole
封装 DO-204AC
长度 7.60 mm
直径 3.60 mm
封装 DO-204AC
工作温度 -55℃ ~ 175℃ TJ
产品生命周期 Obsolete
包装方式 Tape & Reel TR
制造应用 通用
RoHS标准 RoHS Compliant
含铅标准 Lead Free
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
P6KE51C Littelfuse 力特 | 当前型号 | 当前型号 |
P6KE51CA-T 美台 | 功能相似 | P6KE51C和P6KE51CA-T的区别 |
P6KE51CA-E3/54 威世 | 功能相似 | P6KE51C和P6KE51CA-E3/54的区别 |
SA43CA 力特 | 功能相似 | P6KE51C和SA43CA的区别 |