PSMN5R0-80BS概述
NXP PSMN5R0-80BS 晶体管, MOSFET, N沟道, 100 A, 80 V, 0.00436 ohm, 10 V, 3 V
The is a N-channel MOSFET suitable for standard level gate drive sources. It is designed and qualified for use in a wide range of load switching, server power supplies, DC-to-DC converters and domestic equipment applications.
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- High efficiency due to low switching and conduction losses
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- -55 to 175°C Junction temperature range
PSMN5R0-80BS中文资料参数规格
技术参数
针脚数 3
漏源极电阻 0.00436 Ω
极性 N-Channel
耗散功率 270 W
阈值电压 3 V
漏源极电压Vds 80 V
连续漏极电流Ids 100A
工作温度Max 175 ℃
工作温度Min -55 ℃
封装参数
引脚数 3
封装 TO-263
外形尺寸
封装 TO-263
物理参数
工作温度 -55℃ ~ 175℃
其他
产品生命周期 Unknown
制造应用 Industrial, Consumer Electronics, Motor Drive & Control, Communications & Networking, Power Management
符合标准
RoHS标准 Exempt
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
在线购买PSMN5R0-80BS
型号： PSMN5R0-80BS
制造商：
NXP
恩智浦
描述：NXP PSMN5R0-80BS 晶体管, MOSFET, N沟道, 100 A, 80 V, 0.00436 ohm, 10 V, 3 V