NXP PDTD123ET,215 晶体管 双极预偏置/数字, BRT, 50 V, 500 mA, 2.2 kohm, 2.2 kohm, 1 电阻比率, SOT-23
The is a PNP Resistor Equipped Transistor RET encapsulated in a surface-mount plastic package. It offers built-in bias resistors and simplifies circuit design. It is designed for use with control of IC inputs, cost-saving alternative for BC847/857 series in digital applications and switching load applications.
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- 500mA Output current capability
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- Reduces component count
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- ±10% Resistor ratio tolerance
极性 N-Channel, NPN
耗散功率 0.25 W
击穿电压集电极-发射极 50 V
集电极最大允许电流 500mA
最小电流放大倍数hFE 40 @50mA, 5V
额定功率Max 250 mW
工作温度Max 150 ℃
工作温度Min -65 ℃
耗散功率Max 250 mW
安装方式 Surface Mount
引脚数 3
封装 SOT-23-3
高度 1 mm
封装 SOT-23-3
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 Power Management, Automotive, Industrial
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
PDTD123ET,215 NXP 恩智浦 | 当前型号 | 当前型号 |
PDTD123YT,215 恩智浦 | 类似代替 | PDTD123ET,215和PDTD123YT,215的区别 |
PDTD123TT,215 恩智浦 | 类似代替 | PDTD123ET,215和PDTD123TT,215的区别 |
PDTD123TK 恩智浦 | 类似代替 | PDTD123ET,215和PDTD123TK的区别 |