PMV65XP

P沟道的TrenchMOS极低水平FET P-channel TrenchMOS extremely low level FET

最大源漏极电压VdsDrain-Source Voltage| -20V \---|--- 最大栅源极电压Vgs±Gate-Source Voltage| 12V 最大漏极电流IdDrain Current| -4.3A 源漏极导通电阻RdsDrain-Source On-State Resistance| 0.065Ω @-1A,-4.7V 开启电压Vgs（th）Gate-Source Threshold Voltage| -0.47--0.9 耗散功率PdPower Dissipation| 480mW/0.48W Description & Applications| 20 V, single P-channel Trench MOSFET Low threshold voltage Low on-state resistance Trench MOSFET technology 描述与应用| 20 V，单P沟道沟道MOSFET 低阈值电压 低通态电阻 沟道MOSFET技术

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P-channel TrenchMOS extremely low level FET