RF Power Field-Effect Transistor, 1Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, GREEN, H-36260-2, 2Pin
Summary of Features:
\- Average output power = 47 dBm
\- Linear Gain = 15.9 dB
\- Efficiency = 27%
\- IMD = -36 dBc
\- ACPR = -41 dBc
\- Output power at P1dB = 240 W
\- Efficiency = 57%
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
PTFA192001EV4R0XTMA1 Infineon 英飞凌 | 当前型号 | 当前型号 |
PTFA192001EV4XWSA1 英飞凌 | 类似代替 | PTFA192001EV4R0XTMA1和PTFA192001EV4XWSA1的区别 |