PTFB211501FV1R0XTMA1

High Power RF LDMOS FET, 150W, 30V, 2110 – 2170MHz

Summary of Features:

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Broadband internal matching

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Typical single-carrier WCDMA performance at 2170 MHz, 30 V, IDQ = 1.2 A, 3GPP signal, channel bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% CCDF

\- Average output power = 40 W

\- Linear Gain = 18 dB

\- Efficiency = 32%

\- Adjacent channel power = –34 dBc

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Typical CW performance, 2170 MHz, 30 V

\- Output power at P1dB = 150 W

\- Efficiency = 55%

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Integrated ESD protection: Human Body Model, Class 2 minimum

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Capable of handling 10:1 VSWR @ 30 V, 150 W CW output power

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Pb-free and RoHS compliant

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Package: H-37248-2, earless