PTFB192503ELV1R0XTMA1

Trans RF MOSFET N-CH 65V 7Pin Case H-33288 T/R

Summary of Features:

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Broadband input and output matching

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Enhanced for use in DPD error correction systems

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Typical two-carrier WCDMA performance at 1990 MHz, 30 V  

\- Average output power = 50 W

\- Linear Gain = 19 dB

\- Efficiency = 28%

\- IMD = -35 dBc

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Typical CW performance, 1990 MHz, 30 V

\- Output power at P1dB = 240 W

\- Efficiency = 55%

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Increased negative gate-source voltage range for improved performance in Doherty peaking amplifiers

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Capable of handling 10:1 VSWR @ 30 V, 240 W CW output power

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Integrated ESD protection. Human Body Model, Class 2 minimum 

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Pb-free and RoHS compliant

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Package: H-33288-6, bolt-down