PTFB211803FLV2R0XTMA1

PTFB211803FLV2R0XTMA1图片1
PTFB211803FLV2R0XTMA1图片2
PTFB211803FLV2R0XTMA1概述

Trans RF MOSFET N-CH 65V 5Pin Case 34288-4/2 T/R

Summary of Features:

.
Broadband internal matching
.
Typical two-carrier WCDMA performance at 2170 MHz, 30 V

\- Average output power = 40 W

\- Linear Gain = 17.5 dB

\- Efficiency = 29.7%

\- Intermodulation distortion = –34 dBc

\- Adjacent channel power = –37 dBc

.
Typical CW performance, 2170 MHz, 30 V

\- Output power at P1dB = 180 W

\- Efficiency = 55%

.
Increased negative gate-source voltage range for improved performance in Doherty amplifiers
.
Integrated ESD protection.
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Capable of handling 10:1 VSWR @ 30 V, 180 W CW output power
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Pb-free and RoHS compliant
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Package: H-34288-4/2, earless
PTFB211803FLV2R0XTMA1中文资料参数规格
技术参数

频率 2.17 GHz

输出功率 40 W

增益 17.5 dB

测试电流 1.3 A

工作温度Max 200 ℃

工作温度Min -40 ℃

额定电压 65 V

电源电压 30.0 V

封装参数

引脚数 5

封装 H-34288-4

外形尺寸

封装 H-34288-4

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

数据手册

在线购买PTFB211803FLV2R0XTMA1
型号: PTFB211803FLV2R0XTMA1
描述:Trans RF MOSFET N-CH 65V 5Pin Case 34288-4/2 T/R

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