射频金属氧化物半导体场效应RF MOSFET晶体管
Summary of Features:
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Asymmetrical design
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Broadband internal matching
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Typical CW performance, 2690 MHz, 28 V combined outputs
\- Output power at P3dB = 30 W
\- Efficiency = 54%
\- Gain = 13 dB
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Typical single-carrier WCDMA performance, 2690 MHz, 28 V, 10 dB PAR
\- Output power = 37.5 dBm avg
\- Gain = 15.5 dB
\- Efficiency = 45%
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Capable of handling 10:1 VSWR at 32 V, 30 W CW output power
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Integrated ESD protection
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Pb-free and RoHS compliant
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Package: H-37248H-4, earless