PTFB182503EL V1概述
射频金属氧化物半导体场效应RF MOSFET晶体管 RFP-LDMOS 9
Summary of Features:
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- Broadband input and output matching
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- Enhanced for use in DPD error correction systems
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- Typical two-carrier WCDMA performance at 1880 MHz, 30 V,
\- Average output power = 50 W
\- Linear Gain = 19 dB
\- Efficiency = 28%
\- IMD = -35 dBc
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- Typical CW performance at 1880 MHz, 30 V,
\- Output power at P1dB = 240 W
\- Efficiency = 55%
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- Increased negative gate-source voltage range for improved performance in Doherty peaking amplifiers
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- Capable of handling 10:1 VSWR @ 30 V, 240 W CW output power
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- Integrated ESD protection. Human Body Model, Class 2 minimum
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- Pb-free and RoHS compliant
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- Package: H-33288-6, bolt-down
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