RJH60F7DPQ-A0#T0

RENESAS  RJH60F7DPQ-A0#T0  单晶体管, IGBT, 90 A, 1.6 V, 328.9 W, 600 V, TO-247, 3 引脚

You can use this IGBT transistor from Renesas as an electronic switch. Its maximum power dissipation is 328900 mW. It has a maximum collector emitter voltage of 600 V. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration. This device is made with trench technology.

得捷:
IGBT 600V 90A 328.9W TO247A

e络盟:
RENESAS  RJH60F7DPQ-A0#T0  单晶体管, IGBT, 90 A, 1.6 V, 328.9 W, 600 V, TO-247, 3 引脚

艾睿:
You can use this RJH60F7DPQ-A0#T0 IGBT transistor from Renesas as an electronic switch. Its maximum power dissipation is 328900 mW. It has a maximum collector emitter voltage of 600 V. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration. This device is made with trench technology.

Verical:
Trans IGBT Chip N-CH 600V 90A 328900mW 3-Pin3+Tab TO-247A

DeviceMart:
IGBT 600V 90A 328.9W TO247A