RN2312TE85L,F

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RN2312TE85L,F概述

双极晶体管 - 预偏置 100mA -50volts 3Pin 22Kohms

The PNP digital transistor from is your alternative to traditional BJTs in that it can provide digital signal processing power. This product"s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 120@1mA@5 V. It has a maximum collector emitter saturation voltage of 0.3@0.25mA@5mA V. Its maximum power dissipation is 100 mW. It has a maximum collector emitter voltage of 50 V. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. It is made in a single configuration. This transistor has an operating temperature range of -55 °C to 150 °C.

RN2312TE85L,F中文资料参数规格
技术参数

极性 PNP

耗散功率 100 mW

击穿电压集电极-发射极 50 V

集电极最大允许电流 100mA

最小电流放大倍数hFE 120 @1mA, 5V

最大电流放大倍数hFE 400

额定功率Max 100 mW

工作温度Max 150 ℃

工作温度Min -55 ℃

增益带宽 200 MHz

耗散功率Max 100 mW

封装参数

安装方式 Surface Mount

引脚数 3

封装 SC-70

外形尺寸

长度 2 mm

宽度 1.25 mm

高度 0.9 mm

封装 SC-70

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

数据手册

在线购买RN2312TE85L,F
型号: RN2312TE85L,F
制造商: Toshiba 东芝
描述:双极晶体管 - 预偏置 100mA -50volts 3Pin 22Kohms

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