RN2313TE85L,F

RN2313TE85L,F图片1
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RN2313TE85L,F概述

USM PNP 50V 100mA

"s PNP digital transistor is the ideal component to use in situations where digital signal processing is required. This product"s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 120@1mA@5 V. It has a maximum collector emitter saturation voltage of 0.3@0.25mA@5mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 100 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. It is made in a single configuration. This transistor has an operating temperature range of -55 °C to 150 °C.

RN2313TE85L,F中文资料参数规格
技术参数

极性 PNP

耗散功率 100 mW

击穿电压集电极-发射极 50 V

集电极最大允许电流 100mA

最小电流放大倍数hFE 120

最大电流放大倍数hFE 400

额定功率Max 100 mW

工作温度Max 150 ℃

工作温度Min -55 ℃

增益带宽 200 MHz

耗散功率Max 100 mW

封装参数

安装方式 Surface Mount

引脚数 3

封装 SC-70

外形尺寸

长度 2 mm

宽度 1.25 mm

高度 0.9 mm

封装 SC-70

物理参数

工作温度 -55℃ ~ 150℃

其他

产品生命周期 Discontinued at Digi-Key

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

数据手册

RN2313TE85L,F引脚图与封装图
RN2313TE85L,F引脚图
RN2313TE85L,F封装图
RN2313TE85L,F封装焊盘图
在线购买RN2313TE85L,F
型号: RN2313TE85L,F
制造商: Toshiba 东芝
描述:USM PNP 50V 100mA

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