RN1115MFVTPL3

RN1115MFVTPL3图片1
RN1115MFVTPL3图片2
RN1115MFVTPL3概述

VESM NPN 50V 100mA

Compared to traditional BJ transistors, the NPN digital transistor from is meant to be used with digital signal processing circuits. This product"s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 50@10mA@5 V. It has a maximum collector emitter saturation voltage of 0.3@0.25mA@5mA V. Its maximum power dissipation is 150 mW. It has a maximum collector emitter voltage of 50 V. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. It is made in a single configuration. This transistor has an operating temperature range of -55 °C to 150 °C.

RN1115MFVTPL3中文资料参数规格
技术参数

极性 NPN

耗散功率 150 mW

击穿电压集电极-发射极 50 V

集电极最大允许电流 100mA

最小电流放大倍数hFE 50

工作温度Max 150 ℃

工作温度Min 65 ℃

耗散功率Max 150 mW

封装参数

安装方式 Surface Mount

引脚数 3

封装 VESM

外形尺寸

长度 1.2 mm

宽度 0.5 mm

高度 1.2 mm

封装 VESM

物理参数

工作温度 65℃ ~ 150℃

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

数据手册

RN1115MFVTPL3引脚图与封装图
RN1115MFVTPL3引脚图
RN1115MFVTPL3封装图
RN1115MFVTPL3封装焊盘图
在线购买RN1115MFVTPL3
型号: RN1115MFVTPL3
制造商: Toshiba 东芝
描述:VESM NPN 50V 100mA

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