RN2413TE85LF

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RN2413TE85LF概述

Trans Digital BJT PNP 50V 100mA 200mW 3Pin S-Mini T/R

Are you in need of the digital form of a traditional bipolar junction transistor? The PNP digital transistor from is what you"ve been looking for. This product"s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 120@1mA@5 V. It has a maximum collector emitter saturation voltage of 0.3@0.25mA@5mA V. Its maximum power dissipation is 200 mW. It has a maximum collector emitter voltage of 50 V. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.

RN2413TE85LF中文资料参数规格
技术参数

耗散功率 200 mW

击穿电压集电极-发射极 50 V

最小电流放大倍数hFE 120 @1mA, 5V

额定功率Max 200 mW

工作温度Max 150 ℃

工作温度Min -55 ℃

增益带宽 200 MHz

耗散功率Max 200 mW

封装参数

安装方式 Surface Mount

引脚数 3

封装 SOT-23-3

外形尺寸

高度 1.1 mm

封装 SOT-23-3

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

数据手册

在线购买RN2413TE85LF
型号: RN2413TE85LF
制造商: Toshiba 东芝
描述:Trans Digital BJT PNP 50V 100mA 200mW 3Pin S-Mini T/R

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