RN1423TE85LF

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RN1423TE85LF概述

Trans Digital BJT NPN 50V 800mA 200mW 3Pin S-Mini T/R

Look no further than "s NPN digital transistor, which can provide a solution to your digital signal processing needs. This product"s maximum continuous DC collector current is 800 mA, while its minimum DC current gain is 70@100mA@1 V. It has a maximum collector emitter saturation voltage of 0.25@2mA@50mA|0.25@1mA@50mA V. Its maximum power dissipation is 200 mW. It has a maximum collector emitter voltage of 50 V. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It is made in a single configuration. This transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

RN1423TE85LF中文资料参数规格
技术参数

耗散功率 0.2 W

击穿电压集电极-发射极 50 V

最小电流放大倍数hFE 70 @100mA, 1V

最大电流放大倍数hFE 70

额定功率Max 200 mW

工作温度Max 150 ℃

工作温度Min -55 ℃

增益带宽 300 MHz

耗散功率Max 200 mW

封装参数

安装方式 Surface Mount

引脚数 3

封装 SOT-23-3

外形尺寸

高度 1.1 mm

封装 SOT-23-3

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

数据手册

在线购买RN1423TE85LF
型号: RN1423TE85LF
制造商: Toshiba 东芝
描述:Trans Digital BJT NPN 50V 800mA 200mW 3Pin S-Mini T/R

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