N 通道 MOSFET, Fairchild Semiconductor增强模式场效应晶体管 FET 使用了 Fairchild 的专利高单元密度的 DMOS 技术进行生产。 这种高密度工艺设计用于尽量减小通态电阻,提供耐用可靠的性能和快速切换。### MOSFET 晶体管,Fairchild SemiconductorFairchild 提供大量 MOSFET 设备组合,包括高电压 >250V 低电压 Fairchild MOSFET 通过降低电压峰值和过冲提供极佳的设计可靠性,以减少结电容和反向恢复电荷,无需额外外部元件即可保持系统启动和运行更长时间。
The is a N-channel logic level Power MOSFET produced using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters and relay drivers. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate bias in the 3V to 5V range, thereby facilitating true on-off power control directly from logic level 5V integrated circuits.
额定电压DC 50.0 V
额定电流 14.0 A
额定功率 14 W
针脚数 3
漏源极电阻 100 mΩ
极性 N-Channel
耗散功率 48 W
阈值电压 2 V
输入电容 670 pF
栅电荷 40.0 nC
漏源极电压Vds 50 V
漏源击穿电压 50.0 V
栅源击穿电压 ±10.0 V
连续漏极电流Ids 14.0 A
上升时间 24 ns
输入电容Ciss 670pF @25VVds
额定功率Max 48 W
下降时间 16 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 48 W
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
长度 6.73 mm
宽度 6.22 mm
高度 2.39 mm
封装 TO-252-3
工作温度 -55℃ ~ 175℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
RFD14N05LSM Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
RFD14N05LSM9A 飞兆/仙童 | 类似代替 | RFD14N05LSM和RFD14N05LSM9A的区别 |
NTD3055L104T4G 安森美 | 功能相似 | RFD14N05LSM和NTD3055L104T4G的区别 |
IRLR3105PBF 英飞凌 | 功能相似 | RFD14N05LSM和IRLR3105PBF的区别 |