FAIRCHILD SEMICONDUCTOR RFP12N10L 晶体管, MOSFET, N沟道, 12 A, 100 V, 200 mohm, 5 V, 2 V
The is a 100V N-channel logic level enhancement mode power MOSFET designed for logic level 5V driving sources in applications such as programmable controllers, automotive switching and solenoid drivers. This performance is accomplished through a special gate oxide design which provides full rated conduction at gate biases in the 3 to 5V range, thereby facilitating true on-off power control directly from logic circuit supply voltages. This product is general usage and suitable for many different applications.
额定电压DC 100 V
额定电流 12.0 A
额定功率 60 W
通道数 1
针脚数 3
漏源极电阻 200 mΩ
极性 N-Channel
耗散功率 60 W
阈值电压 2 V
漏源极电压Vds 100 V
漏源击穿电压 100 V
栅源击穿电压 ±10.0 V
连续漏极电流Ids 12.0 A
上升时间 70 ns
输入电容Ciss 900pF @25VVds
额定功率Max 60 W
下降时间 80 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 60000 mW
安装方式 Through Hole
引脚数 3
封装 TO-220-3
长度 10.67 mm
宽度 4.83 mm
高度 9.4 mm
封装 TO-220-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Unknown
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
RFP12N10L Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
FQPF19N20 飞兆/仙童 | 类似代替 | RFP12N10L和FQPF19N20的区别 |
RFP30N06LE 飞兆/仙童 | 类似代替 | RFP12N10L和RFP30N06LE的区别 |
NTE2987 NTE Electronics | 功能相似 | RFP12N10L和NTE2987的区别 |