N沟道 30V 60A
表面贴装型 N 通道 30 V 60A(Ta) 65W(Tc) LFPAK
得捷:
MOSFET N-CH 30V 60A LFPAK
立创商城:
N沟道 30V 60A
艾睿:
Make an effective common source amplifier using this RJK0328DPB-01#J0 power MOSFET from Renesas. Its maximum power dissipation is 65000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
安富利:
Trans MOSFET N-CH 30V 60A 5-Pin LFPAK Embossed T/R
Verical:
Trans MOSFET N-CH Si 30V 60A 5-Pin4+Tab LFPAK T/R
Win Source:
MOSFET N-CH 30V 60A LFPAK
极性 N-CH
耗散功率 65 W
漏源极电压Vds 30 V
连续漏极电流Ids 60A
上升时间 4.3 ns
输入电容Ciss 6380pF @10VVds
额定功率Max 65 W
下降时间 7.3 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 65W Tc
安装方式 Surface Mount
引脚数 5
封装 SOT-669
封装 SOT-669
材质 Silicon
工作温度 150℃ TJ
产品生命周期 Unknown
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free