FAIRCHILD SEMICONDUCTOR RFP70N06 晶体管, MOSFET, N沟道, 70 A, 60 V, 14 mohm, 10 V, 4 V
The is a 60V N-channel power MOSFET using MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. The MOSFET is designed for applications such as switching regulators, switching converters, motor drivers and relay drivers. This transistor can be operated directly from integrated circuits. This product is general usage and suitable for many different applications.
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- Temperature compensating PSPICE® model
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- Peak current vs. pulse width curve
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- UIS Rated curve
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- 175°C Rated junction temperature
额定电压DC 60.0 V
额定电流 70.0 A
额定功率 150 W
针脚数 3
漏源极电阻 14 mΩ
极性 N-Channel
耗散功率 150 W
阈值电压 4 V
漏源极电压Vds 60 V
漏源击穿电压 60.0 V
栅源击穿电压 ±20.0 V
连续漏极电流Ids 70.0 A
上升时间 137 ns
输入电容Ciss 2250pF @25VVds
额定功率Max 150 W
下降时间 24 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 150W Tc
安装方式 Through Hole
引脚数 3
封装 TO-220-3
长度 10.67 mm
宽度 4.83 mm
高度 9.4 mm
封装 TO-220-3
工作温度 -55℃ ~ 175℃
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
RFP70N06 Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
RFP50N06 飞兆/仙童 | 类似代替 | RFP70N06和RFP50N06的区别 |
RFP30N06LE 飞兆/仙童 | 类似代替 | RFP70N06和RFP30N06LE的区别 |
RFP8P05 飞兆/仙童 | 类似代替 | RFP70N06和RFP8P05的区别 |