RJK0332DPB-01#J0

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RJK0332DPB-01#J0概述

Trans MOSFET N-CH 30V 35A 5Pin4+Tab LFPAK T/R

N-Channel 30V 35A Ta 45W Tc Surface Mount LFPAK


得捷:
SILICON N CHANNEL POWER SWITCHI


艾睿:
Compared to traditional transistors, RJK0332DPB-01#J0 power MOSFETs, developed by Renesas, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 45000 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.


Chip1Stop:
Trans MOSFET N-CH Si 30V 35A 5-Pin4+Tab LFPAK T/R


Verical:
Trans MOSFET N-CH Si 30V 35A 5-Pin4+Tab LFPAK T/R


Win Source:
MOSFET N-CH 30V 35A LFPAK


RJK0332DPB-01#J0中文资料参数规格
技术参数

耗散功率 45 W

漏源极电压Vds 30 V

上升时间 3.8 ns

输入电容Ciss 2180pF @10VVds

额定功率Max 45 W

下降时间 4.4 ns

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 45W Tc

封装参数

安装方式 Surface Mount

引脚数 5

封装 SOT-669

外形尺寸

封装 SOT-669

物理参数

材质 Silicon

工作温度 150℃ TJ

其他

产品生命周期 Unknown

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

数据手册

在线购买RJK0332DPB-01#J0
型号: RJK0332DPB-01#J0
制造商: Renesas Electronics 瑞萨电子
描述:Trans MOSFET N-CH 30V 35A 5Pin4+Tab LFPAK T/R

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