RJK03M1DPA-00#J5A

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RJK03M1DPA-00#J5A概述

N沟道 30V 50A

N-Channel 30V 50A Ta 45W Tc Surface Mount 8-WPAK


得捷:
MOSFET N-CH 30V 50A 8WPAK


欧时:
BEAM2 Series FET 30V WPAK 2.5mOhm


立创商城:
N沟道 30V 50A


艾睿:
This RJK03M1DPA-00#J5A power MOSFET from Renesas can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 45000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.


安富利:
SILICON N CHANNEL POWER MOS FET POWER SWITCHING


Verical:
Trans MOSFET N-CH Si 30V 50A 8-Pin WPAK EP T/R


RJK03M1DPA-00#J5A中文资料参数规格
技术参数

极性 N-CH

耗散功率 45 W

漏源极电压Vds 30 V

连续漏极电流Ids 50A

上升时间 4.4 ns

输入电容Ciss 4720pF @10VVds

额定功率Max 45 W

下降时间 18.4 ns

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 45W Tc

封装参数

安装方式 Surface Mount

引脚数 8

封装 WFDFN-8

外形尺寸

封装 WFDFN-8

物理参数

材质 Silicon

工作温度 150℃ TJ

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

数据手册

RJK03M1DPA-00#J5A引脚图与封装图
RJK03M1DPA-00#J5A引脚图
RJK03M1DPA-00#J5A封装图
RJK03M1DPA-00#J5A封装焊盘图
在线购买RJK03M1DPA-00#J5A
型号: RJK03M1DPA-00#J5A
制造商: Renesas Electronics 瑞萨电子
描述:N沟道 30V 50A

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