


RJK0330DPB 系列 N-沟道 30 V 2.7 mOhm 27 nC 开关 Mosfet - LFPAK-5
表面贴装型 N 通道 45A(Ta) 55W(Tc) LFPAK
得捷:
MOSFET N-CH 30V 45A LFPAK
立创商城:
N沟道 30V 45A
艾睿:
As an alternative to traditional transistors, the RJK0330DPB-01#J0 power MOSFET from Renesas can be used to both amplify and switch electronic signals. Its maximum power dissipation is 55000 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
富昌:
RJK0330DPB Series N-Channel 30 V 2.7 mOhm 27 nC Switching MosFet - LFPAK-5
Verical:
Trans MOSFET N-CH Si 30V 45A 5-Pin4+Tab LFPAK T/R
Win Source:
MOSFET N-CH 30V 45A LFPAK
极性 N-CH
耗散功率 55 W
漏源极电压Vds 30 V
连续漏极电流Ids 45A
上升时间 3.9 ns
输入电容Ciss 4300pF @10VVds
额定功率Max 55 W
下降时间 5.4 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 55W Tc
安装方式 Surface Mount
引脚数 5
封装 SOT-669
封装 SOT-669
材质 Silicon
工作温度 150℃ TJ
产品生命周期 Unknown
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free