RJH60F4DPQ-A0#T0

RENESAS  RJH60F4DPQ-A0#T0  单晶体管, IGBT, 60 A, 1.7 V, 235.8 W, 600 V, TO-247, 3 引脚

You won"t need to worry about any lagging in your circuit with this IGBT transistor from Renesas. Its maximum power dissipation is 235800 mW. It has a maximum collector emitter voltage of 600 V. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.