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Trans IGBT Chip N-CH 600V 90A 328900mW 3Pin3+Tab TO-247A Tube

Don"t be afraid to step up the amps in your device when using this IGBT transistor from Renesas. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 328900 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single dual collector configuration.