RJH60D6DPM-00#T1

Trans IGBT Chip N-CH 600V 80A 50000mW 3Pin3+Tab TO-3PFM Tube

This IGBT transistor from Renesas is perfect if your circuit contains high currents passing through it. Its maximum power dissipation is 50000 mW. It has a maximum collector emitter voltage of 600 V. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single configuration. This device is made with trench technology. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.