RJH60F6DPQ-A0#T0

RENESAS  RJH60F6DPQ-A0#T0  单晶体管, IGBT, 85 A, 1.35 V, 297.6 W, 600 V, TO-247, 3 引脚

The IGBT transistor from Renesas will work effectively even with higher currents. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 297600 mW. It is made in a single configuration. This device is made with trench technology. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

得捷:
IGBT 600V 85A 297.6W TO247A

贸泽:
IGBT 晶体管 IGBT

e络盟:
RENESAS  RJH60F6DPQ-A0#T0  单晶体管, IGBT, 85 A, 1.35 V, 297.6 W, 600 V, TO-247, 3 引脚

艾睿:
Trans IGBT Chip N-CH 600V 85A 3-Pin3+Tab TO-247A

DeviceMart:
IGBT 600V 85A 297.6W TO247A