16A , 50V , 0.047 Ohm的N通道功率MOSFET 16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs
The RFD16N05 and N-channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits.
Formerly developmental type TA09771.
Features
• 16A, 50V
•rDSON= 0.047Ω
• Temperature Compensating PSPICE®Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
•175oC Operating Temperature
• Related Literature
\- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
额定电压DC 50.0 V
额定电流 16.0 A
漏源极电阻 47.0 mΩ
极性 N-Channel
耗散功率 72W Tc
输入电容 900 pF
栅电荷 45.0 nC
漏源极电压Vds 50 V
漏源击穿电压 50.0 V
栅源击穿电压 ±20.0 V
连续漏极电流Ids 16.0 A
上升时间 30 ns
输入电容Ciss 900pF @25VVds
额定功率Max 72 W
下降时间 30 ns
耗散功率Max 72W Tc
安装方式 Surface Mount
封装 TO-252-3
封装 TO-252-3
工作温度 -55℃ ~ 175℃ TJ
产品生命周期 Unknown
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
RFD16N05SM Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
RFD16N05SM9A 飞兆/仙童 | 类似代替 | RFD16N05SM和RFD16N05SM9A的区别 |
RFD16N05SM_NL 飞兆/仙童 | 功能相似 | RFD16N05SM和RFD16N05SM_NL的区别 |