RFD16N05LSM

16A ， 50V ， 0.047欧姆，逻辑电平， N沟道功率MOSFET 16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs

directly from logic circuit supply voltages. 5V range, thereby facilitating true on-off power control provides full rated conductance at gate biases in the 3V to accomplished through a special gate oxide design which switches for bipolar transistors. This performance is

switching converters, motor relay drivers and emitter such as programmable controllers, switching regulators, These are N-Channel logic level power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI

integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic level 5V driving sources in applications

Features

• 16A, 50V

•rDSON= 0.047Ω

• UIS SOA Rating Curve Single Pulse

• Design Optimized for 5V Gate Drives

• Can be Driven Directly from CMOS, NMOS, TTL Circuits

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Majority Carrier Device

• Related Literature

\- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”