RFD16N05

16A ， 50V ， 0.047欧姆，逻辑电平， N沟道功率MOSFET 16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs

The and RFD16N05SM N-channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits.

Formerly developmental type TA09771.

Features

• 16A, 50V

•rDSON= 0.047Ω

• Temperature Compensating PSPICE®Model

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

•175oC Operating Temperature

• Related Literature

\- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”