RENESAS R1LP5256ESP-5SR 芯片, 存储器, SRAM, 256Kb, 5V, 55NS, 28SOP
The is a 256kB advanced Static Random Access Memory SRAM organized as 32768-word by 8-bit, fabricated by Renesass high-performance 0.15µm CMOS and TFT technologies. The R1LP5256E Series has realized higher density, higher performance and low power consumption. The R1LP5256E Series is suitable for memory applications where a simple interfacing, battery operating and battery backup are the important design objectives. It also features single 4.5 to 5.5V power supply.
电源电压DC 4.50V min
针脚数 28
存取时间 55 ns
内存容量 32000 B
工作温度Max 70 ℃
工作温度Min 0 ℃
电源电压 4.5V ~ 5.5V
电源电压Max 5.5 V
电源电压Min 4.5 V
安装方式 Surface Mount
引脚数 28
封装 SOIC
封装 SOIC
工作温度 0℃ ~ 70℃
产品生命周期 Unknown
包装方式 Each
制造应用 Computers & Computer Peripherals, Consumer Electronics, Industrial, 通信与网络, 消费电子产品, Communications & Networking, 工业, 计算机和计算机周边
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
R1LP5256ESP-5SR Renesas Electronics 瑞萨电子 | 当前型号 | 当前型号 |
R1LP5256ESP-7SR 瑞萨电子 | 类似代替 | R1LP5256ESP-5SR和R1LP5256ESP-7SR的区别 |
R1LP5256ESP-5SR#S0 瑞萨电子 | 功能相似 | R1LP5256ESP-5SR和R1LP5256ESP-5SR#S0的区别 |