RF3376

RFMD  RF3376  芯片, 射频放大器/增益模块, DC-6GHZ, SOT89

The is a general purpose RF Amplifier IC designed for use as an easily-cascadable 50R gain block. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor HBT process. Applications include IF and RF amplification in wireless voice and data communication products operating in frequency bands up to 6000MHz. The device is self-contained with 50R input and output impedances and requires only two external DC-biasing elements to operate as specified.

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Internally matched input and output

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22dB Small signal gain

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11dBm Output P1dB