Low Power SRAM, R1WV Series, Renesas ElectronicsThe R1WV Series of advanced low voltage static RAMs is suitable for memory applications where a simple interfacing, battery operating and battery backup are the important design objectives.Single 2.7V to 3.6V power supply Small stand-by current No clocks, No refresh required All inputs and outputs are TTL compatible ### SRAM（静态随机存取存储器）
低功率 SRAM，R1WV 系列，
R1WV 系列高级低电压静态 RAM 适用于简单接口连接、电池工作和电池备份为重要设计目标的存储器应用。
单 2.7V 至 3.6V 电源
小待机电流
无时钟、无需刷新
所有输入和输出均兼容 TTL
欧时:
Renesas Electronics R1WV6416RBG-5SI#B0, 64Mbit SRAM 内存, 4M 个字 x 16 位, 2.7 → 3.6 V, 48针 FBGA封装
艾睿:
SRAM Chip Async Single 3V 64M-bit 8M/4M x 8/16-bit 55ns 48-Pin FBGA Tray
Chip1Stop:
SRAM Chip Async Single 3V 64M-Bit 8M/4M x 8/16-Bit 55ns 48-Pin FBGA Tray
Verical:
SRAM Chip Async Single 3V 64M-bit 8M/4M x 8/16-bit 55ns 48-Pin FBGA Tray
儒卓力:
**SRAM 4Mx16 55ns FBGA48 **
Win Source:
IC SRAM 64MBIT PARALLEL 48TFBGA / SRAM Memory IC 64Mb 8M x 8, 4M x 16 Parallel 55 ns 48-TFBGA 8.5x11