RN2424 带阻尼PNP三极管 -50V -800mA/0.8A 90 0.2W/200mW SOT-23/SC-59 标记RD 开关电路,逆变器,接口电路,驱动电路
集电极-基极反向击穿电压VBRCBO Collector-Base VoltageVCBO| -50V \---|--- 集电极-发射极反向击穿电压VBRCEO Collector-Emitter VoltageVCEO| -50V 集电极连续输出电流IC Collector CurrentIC| -800mA/0.8A 基极输入电阻R1 Input ResistanceR1| 10KΩ/Ohm 基极-发射极输入电阻R2 Base-Emitter ResistanceR2| 10KΩ/Ohm 电阻比R1/R2 Resistance Ratio| 1 直流电流增益hFE DC Current GainhFE| 90 截止频率fT Transtion FrequencyfT| 200MHz 耗散功率Pc Power Dissipation| 0.2W/200mW Description & Applications| Features •Transistor Silicon PNP Epitaxial Type PCT Process •High current type ICMAX = −800mA •With built-in bias resistors •Simplify circuit design •Reduce a quantity of parts and manufacturing process •Low VCE sat •Complementary to RN1421~RN1427 Applications •Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 描述与应用| 特点 •PNP的硅外延型(PCT工艺) •高电流型(IC(MAX)=-800MA) •内置偏置电阻 •简化电路设计 •减少了部件数量和制造工艺 •低VCE(SAT) •互补RN1421~~ RN1427 应用 •开关,逆变电路,接口电路和驱动器电路应用
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
RN2424 Toshiba 东芝 | 当前型号 | 当前型号 |
RN2427 东芝 | 完全替代 | RN2424和RN2427的区别 |
DTB114EKT146 罗姆半导体 | 功能相似 | RN2424和DTB114EKT146的区别 |
DTB123YKT146 罗姆半导体 | 功能相似 | RN2424和DTB123YKT146的区别 |