RJK5014DPP

硅N沟道MOS FET高速电源开关 Silicon N Channel MOS FET High Speed Power Switching

Features

• Low on-resistance

RDSon = 0.325 Ω typ. at ID = 9.5 A, VGS = 10 V, Ta = 25 °C

• Low leakage current

• High speed switching

Win Source:
MOSFET N-CH 500V 19A TO220