S29GL128P10TFI010

SPANSION  S29GL128P10TFI010  闪存, 或非, 128 Mbit, 16M x 8位 / 8M x 16位, 并行, TSOP, 56 引脚

The is a 128MB page mode Flash Memory featuring 90nm MirrorBit process technology. This device offers a fast page access time of 100ns with a corresponding random access time as fast as 90ns. It features a write buffer that allows a maximum of 32 words/64 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes the device ideal for todays eMBedded applications that require higher density, better performance and lower power consumption.

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Highest address sector protected

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Enhanced Versatile I/O™ control

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Secured silicon sector region

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Can be programmed and locked at the factory or by the customer

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100000 Erase cycles per sector typical

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20 Years data retention typical

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Suspend and resume commands for program and erase operations

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Write operation status bits indicate program and erase operation completion

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Unlock bypass program command - Reduces programming time

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Support for CFI Common Flash Interface

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Persistent and password methods of advanced sector protection

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WA#/ACC input - Protects first or last sector regardless of sector protection settings

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Hardware reset input RESET# resets device

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Ready/busy# output RY/BY# detects program or erase cycle completion