S34ML04G100BHI000

SPANSION  S34ML04G100BHI000  闪存, 与非, 4 Gbit, 512M x 8位, 并行, BGA, 63 引脚

The is a 4GB SLC NAND Flash Memory for embedded. It is offered in 3.3VCC and VCCQ power supply and with x8 or x16 I/O interface. The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. The page size for x8 is bytes for x16 1024 + 32 words. Each block can be programmed and erased up to 100000 cycles with ECC error correction code on. To extend the lifetime of NAND flash devices, the implementation of an ECC is mandatory. The chip supports CE# don"t care function. This function allows the direct download of the code from the NAND flash memory device by a microcontroller, since the CE# transitions do not stop the read operation. The device has a read cache feature that improves the read throughput for large files. During cache reading, the devices load the data in a cache register while the previous data is transferred to the I/O buffers to be read.

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Open NAND flash interface 1.0 compliant

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Address, data and commands multiplexed

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Security - One time programmable OTP area

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Hardware program/erase disabled during power transition

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Support multiplane program and erase commands

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Supports copy back program

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Electronic signature - Manufacturer ID of 00h

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Page read/program

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Block erase/multiplane erase - Block erase time of 3.5ms typical

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Reliability - 10 years data retention typical

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Blocks zero and one are valid and will be valid for at least 1000 program-erase cycles with ECC