S29GL512S10TFI020

SPANSION  S29GL512S10TFI020  闪存, 或非, 512 Mbit, 32M x 16位, 并行, TSOP, 56 引脚

The is a 512MB GL-S MirrorBit® Eclipse™ Flash Non-Volatile Memory fabricated on 65nm process technology. This device offers a fast page access time as fast as 100ns with a corresponding random access time as fast as 90ns. It features a write buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes the device ideal for todays eMBedded applications that require higher density, better performance and lower power consumption.

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Lowest address sector protected

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Single supply for read/program/erase

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Versatile I/O™ feature - Wide I/O voltage range of 1.65V to VCC

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Asynchronous 32-byte page read

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Sector erase - Uniform 128-kB sectors

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Suspend and resume commands for program and erase operations

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Status register, data polling and ready/busy pin methods to determine device status

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Advanced sector protection - Volatile and non-volatile protection methods for each sector

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Separate 1024-byte one time program array with two lockable regions

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Common flash interface parameter table

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100000 Erase cycles for any sector typical

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20 Years data retention typical