S29GL512S11TFIV10

S29GL512S11TFIV10图片1
S29GL512S11TFIV10图片2
S29GL512S11TFIV10概述

SPANSION  S29GL512S11TFIV10  芯片, 闪存, 或非, 512MB, TSOP-56

GL-S MirrorBit® Eclipse™ Flash Non-Volatile Memory Family

S29GL01GS  1 Gbit  128 Mbyte

S29GL512S  512 Mbit  64 Mbyte

S29GL256S  256 Mbit  32 Mbyte

S29GL128S  128 Mbit  16 Mbyte

CMOS 3.0 Volt Core with Versatile I/O

General Description

The ® S29GL01G/512/256/128S are MirrorBit Eclipse flash products fabricated on 65 nm process technology. These devices offer a fast page access time as fast as 15 ns with a corresponding random access time asfast as 90 ns. They feature a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting infaster effective

programming time than standard programming algorithms. Thismakes these devices ideal for today’s embedded applications that require higher density, better performance and lower power consumption.

Distinctive Characteristics

65 nm MirrorBit Eclipse Technology

Single supply VCC for read / program / erase 2.7V to 3.6V

Versatile I/O Feature

       – Wide I/O voltage range VIO: 1.65V to VCC

x16 data bus

Asynchronous 32-byte Page read

512-byte Programming Buffer

       – Programming in Page multiples, up to a maximum of 512 bytes

Single word and multiple program on same word options

Sector Erase

       – Uniform 128-kbyte sectors

Suspend and Resume commands for Program and Erase operations

Status Register, Data Polling, and Ready/Busy pin methods to determine device status

Advanced Sector Protection ASP

     – Volatile and non-volatile protection methods for each sector

Separate 1024-byte One Time Program OTP array with two lockable regions

Common Flash Interface CFI parameter table

Temperature Range

     – Industrial -40°C to +85°C

     – In-Cabin -40°C to +105°C

100,000 erase cycles for any sector typical

20-year data retention typical

Packaging Options

     – 56-pin TSOP

     – 64-ball LAA Fortified BGA, 13 mm x 11 mm

     – 64-ball LAE Fortified BGA, 9 mm x 9 mm

     – 56-ball VBU Fortified BGA, 9 mm x 7 mm

S29GL512S11TFIV10中文资料参数规格
技术参数

电源电压DC 2.70V min

针脚数 56

存取时间 110 ns

内存容量 64000000 B

工作温度Max 85 ℃

工作温度Min -40 ℃

电源电压Max 3.6 V

电源电压Min 2.7 V

封装参数

安装方式 Surface Mount

引脚数 56

封装 TSOP-56

外形尺寸

封装 TSOP-56

其他

产品生命周期 Active

包装方式 Cut Tape CT

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

REACH SVHC版本 2015/12/17

数据手册

在线购买S29GL512S11TFIV10
型号: S29GL512S11TFIV10
制造商: Spansion 飞索半导体
描述:SPANSION  S29GL512S11TFIV10  芯片, 闪存, 或非, 512MB, TSOP-56
替代型号S29GL512S11TFIV10
型号/品牌 代替类型 替代型号对比

S29GL512S11TFIV10

Spansion 飞索半导体

当前型号

当前型号

S29GL512S11TFI020

赛普拉斯

完全替代

S29GL512S11TFIV10和S29GL512S11TFI020的区别

S29GL512S11TFI010

赛普拉斯

完全替代

S29GL512S11TFIV10和S29GL512S11TFI010的区别

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