ON SEMICONDUCTOR SM12T1G. 二极管阵列, TVS, 300W, 12V, SOT-23
ESD 保护器,On Semiconductor
### 瞬态电压抑制器,On Semiconductor
得捷:
TVS DIODE 12VWM 19VC SOT23-3
立创商城:
SM12T1G
欧时:
TVS 二极管 ON Semiconductor SM12T1G 单向, 300W, 19V, 3针 SOT-23封装
艾睿:
Protect users and systems from electrostatic discharge with this tvs SM12T1G ESD protection device from ON Semiconductor. This device&s;s maximum clamping voltage is 19 V. This ESD diode has a maximum ESD protection device voltage of ±15@Air Gap/±8@Contact Disc kV. This ESD diode has a minimum operating temperature of -55 °C and a maximum of 150 °C. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. It is made in a dual common anode|single configuration. Its capacitance value is 95Typ pF.
安富利:
ESD Suppressor TVS ±15KV 3-Pin SOT-23 T/R
Chip1Stop:
ESD Suppressor TVS ±15kV Automotive 3-Pin SOT-23 T/R
Verical:
ESD Suppressor Diode TVS Uni-Dir/Bi-Dir 12V 3-Pin SOT-23 T/R
Newark:
# ON SEMICONDUCTOR SM12T1G TVS Diode, SM Series, Unidirectional, 12 V, 19 V, SOT-23, 3 Pins
力源芯城:
二线单向
Win Source:
TVS DIODE 12VWM 19VC SOT23
额定电压DC 12.0 V
工作电压 15.75 V
电容 95 pF
额定功率 300 W
击穿电压 13.3 V
电路数 2
针脚数 3
耗散功率 300 W
钳位电压 19 V
测试电流 1 mA
最大反向击穿电压 15.75 V
脉冲峰值功率 300 W
最小反向击穿电压 13.3 V
击穿电压 13.2 V
工作温度Max 150 ℃
工作温度Min -55 ℃
工作结温 -55℃ ~ 150℃
耗散功率Max 300 mW
安装方式 Surface Mount
引脚数 3
封装 SOT-23-3
长度 3.04 mm
宽度 1.40 mm
高度 1.01 mm
封装 SOT-23-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 汽车级, 通用
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC版本 2015/12/17
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
SM12T1G ON Semiconductor 安森美 | 当前型号 | 当前型号 |
SM12T1 安森美 | 完全替代 | SM12T1G和SM12T1的区别 |
ESDA14V2L 意法半导体 | 功能相似 | SM12T1G和ESDA14V2L的区别 |
SM12.TCT Semtech Corporation | 功能相似 | SM12T1G和SM12.TCT的区别 |