STMICROELECTRONICS STU150N3LLH6 晶体管, MOSFET, N沟道, 80 A, 30 V, 0.0024 ohm, 10 V, 1 V
N 通道 STripFET™ DeepGate™,STMicroelectronics
STripFET™ MOSFET,带宽击穿电压范围,可提供超低栅极电话和低接通电阻。
### MOSFET ,STMicroelectronics
得捷:
MOSFET N-CH 30V 80A IPAK
欧时:
STMicroelectronics DeepGate, STripFET 系列 Si N沟道 MOSFET 晶体管 STU150N3LLH6, 80 A, Vds=30 V, 3引脚
贸泽:
MOSFET N-CH 30V STripFET 80A DEEPGATE
e络盟:
STMICROELECTRONICS STU150N3LLH6 晶体管, MOSFET, N沟道, 80 A, 30 V, 0.0024 ohm, 10 V, 1 V
艾睿:
Make an effective common source amplifier using this STU150N3LLH6 power MOSFET from STMicroelectronics. Its maximum power dissipation is 110000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C.
DeviceMart:
MOSFET N-CH 30V 80A IPAK
通道数 1
针脚数 3
漏源极电阻 0.0024 Ω
极性 N-Channel
耗散功率 110 W
阈值电压 1 V
漏源极电压Vds 30 V
漏源击穿电压 30 V
连续漏极电流Ids 80A
上升时间 18 ns
输入电容Ciss 4040pF @25VVds
下降时间 46 ns
工作温度Max 175 ℃
工作温度Min 55 ℃
耗散功率Max 110W Tc
安装方式 Through Hole
引脚数 3
封装 TO-251-3
长度 6.6 mm
宽度 2.4 mm
高度 6.9 mm
封装 TO-251-3
工作温度 175℃ TJ
产品生命周期 Not Recommended for New Designs
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
STU150N3LLH6 ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
IPB034N03LGATMA1 英飞凌 | 功能相似 | STU150N3LLH6和IPB034N03LGATMA1的区别 |
IPD031N03LGATMA1 英飞凌 | 功能相似 | STU150N3LLH6和IPD031N03LGATMA1的区别 |
STD100N3LF3 意法半导体 | 功能相似 | STU150N3LLH6和STD100N3LF3的区别 |