STU95N2LH5

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STU95N2LH5概述

STMICROELECTRONICS  STU95N2LH5  晶体管, MOSFET, N沟道, 80 A, 25 V, 0.0044 ohm, 10 V, 1 V

N-Channel 25V 80A Tc 70W Tc Through Hole I-PAK


得捷:
MOSFET N-CH 25V 80A IPAK


贸泽:
MOSFET N-Ch, 25V-0.0038ohms 80A


e络盟:
STMICROELECTRONICS  STU95N2LH5  晶体管, MOSFET, N沟道, 80 A, 25 V, 0.0044 ohm, 10 V, 1 V


艾睿:
This STU95N2LH5 power MOSFET from STMicroelectronics can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 70000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device utilizes stripfet v technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C.


Chip1Stop:
Trans MOSFET N-CH 25V 80A 3-Pin3+Tab IPAK Tube


DeviceMart:
MOSFET N-CH 25V 80A TO220-3


Win Source:
MOSFET N-CH 25V 80A TO220-3


STU95N2LH5中文资料参数规格
技术参数

针脚数 3

漏源极电阻 0.0044 Ω

极性 N-Channel

耗散功率 70 W

阈值电压 1 V

漏源极电压Vds 25 V

连续漏极电流Ids 40.0 A

上升时间 38 ns

输入电容Ciss 1817pF @25VVds

额定功率Max 70 W

下降时间 7 ns

工作温度Max 175 ℃

工作温度Min -55 ℃

耗散功率Max 70W Tc

封装参数

安装方式 Through Hole

引脚数 3

封装 TO-251-3

外形尺寸

长度 10.4 mm

宽度 4.6 mm

高度 9.15 mm

封装 TO-251-3

物理参数

工作温度 -55℃ ~ 175℃ TJ

其他

产品生命周期 Not Recommended for New Designs

包装方式 Tube

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

REACH SVHC标准 No SVHC

REACH SVHC版本 2015/12/17

数据手册

在线购买STU95N2LH5
型号: STU95N2LH5
描述:STMICROELECTRONICS  STU95N2LH5  晶体管, MOSFET, N沟道, 80 A, 25 V, 0.0044 ohm, 10 V, 1 V

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