STMICROELECTRONICS STW24NM60N 功率场效应管, MOSFET, N沟道, 17 A, 600 V, 0.168 ohm, 10 V, 3 V
N 通道 MDmesh™,600V/650V,STMicroelectronics
### MOSFET ,STMicroelectronics
得捷:
MOSFET N-CH 600V 17A TO247
立创商城:
N沟道 600V 17A
欧时:
### N 通道 MDmesh™,600V/650V,STMicroelectronics### MOSFET 晶体管,STMicroelectronics
e络盟:
STMICROELECTRONICS STW24NM60N 功率场效应管, MOSFET, N沟道, 17 A, 600 V, 0.168 ohm, 10 V, 3 V
艾睿:
As an alternative to traditional transistors, the STW24NM60N power MOSFET from STMicroelectronics can be used to both amplify and switch electronic signals. Its maximum power dissipation is 125000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with mdmesh technology. This N channel MOSFET transistor operates in enhancement mode.
安富利:
Trans MOSFET N-CH 650V 17A 3-Pin3+Tab TO-247 Tube
Chip1Stop:
Trans MOSFET N-CH 600V 17A 3-Pin3+Tab TO-247 Tube
TME:
Transistor: N-MOSFET; unipolar; 600V; 11A; 125W; TO247
Verical:
Trans MOSFET N-CH 600V 17A 3-Pin3+Tab TO-247 Tube
力源芯城:
600V,17A,N沟道MOSFET
DeviceMart:
MOSFET N-CH 650V 17A TO247
Win Source:
MOSFET N-CH 600V 17A TO247
针脚数 3
漏源极电阻 0.168 Ω
极性 N-Channel
耗散功率 125 W
阈值电压 3 V
漏源极电压Vds 600 V
上升时间 16.5 ns
输入电容Ciss 1400pF @50VVds
额定功率Max 125 W
下降时间 37 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 125W Tc
安装方式 Through Hole
引脚数 3
封装 TO-247-3
长度 15.75 mm
宽度 5.15 mm
高度 20.15 mm
封装 TO-247-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
STW24NM60N ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
STB24NM60N 意法半导体 | 完全替代 | STW24NM60N和STB24NM60N的区别 |
STB21NM60ND 意法半导体 | 功能相似 | STW24NM60N和STB21NM60ND的区别 |
STB21NM60N 意法半导体 | 功能相似 | STW24NM60N和STB21NM60N的区别 |